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Machinable shape | Circle, rectangle, polygon and other shapes |
Size range | Diameter (maximum diagonal):Φ8-Φ80mm |
Thickness:0.05-50mm | |
Facial type | Reflected PV better than 1/4 λ, Transmission PV is better than 1/10 λ |
Fineness | 10-5 20-10 40-20 |
Surface roughness | <5nm |
Parallelism | <20″ |
Coating | Customized according to customer requirements |
Gallium arsenide (GaAs) crystal has good chemical stability, high hardness and strong resistance to harsh environments. It has good transmissivity in the spectral range of 2000nm to 14000nm, and is widely used in thermal infrared imaging systems, high-power CO2 laser optical systems and FLIR systems. When the on-site environment is poor and optical lenses and windows need to be wiped repeatedly, gallium arsenide is often used to replace zinc selenide as the material of infrared lenses or windows.
Physical Properties
Density(g/cm3) | 5.32 |
Melting point(℃) | 1238 |
Coefficient of thermal expansion (1/℃) | 5.7*10^-6@300K |
Dielectric constant | 12.85/10.88@300K |
Bulk modulus(GPa) | 101.32 |
Shear modulus(GPa) | 55.66@298K |
Thermal conductivity | 55@300K |
Heat capacity(J/g.k) | 0.32 |
Hardness (knoop) (kg/mm2) | 731 |
Water solubility(g/l) | 1.7 |
Young’s modulus (GPa) | 138.5@298K |
Poisson's ratio | 0.31@293K |
Optical Properties
Through wavelength range | 1000nm-14000nm |
Absorption coefficient (1/cm) | 0.01@1500nm-11000nm |
Thermo-optic coefficient, dn/dT(1/K) | 160-120*10^-6%@3000nm-12000nm |
Change of refractive index with wavelength
Wavelength (nm) | Wavelength (nm) | Wavelength (nm) | Wavelength (nm) |
4000 | 3.31 | 14500 | 2.82 |
8000 | 3.34 | 15000 | 2.73 |
10000 | 3.13 | 17000 | 2.59 |
11000 | 3.04 | 19000 | 2.41 |
13000 | 2.97 | 21900 | 2.12 |
13700 | 2.89 |
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