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| GaAs | ||
| Technical parameter | Single crystal | (GaAs) |
| Doped | None;Si;Cr;Te;Zn | |
| Conduction Type | Si;N;Si;N;P | |
| Concentration of flows cm-3 | />5x10¹⁷/~2x10¹⁸>5x10¹⁸ | |
| Density cm-2 | <5x10⁵ | |
| Growth Method Max Size | LEC&HBØ3" | |
| Regular size | Crystal Orientation | <100> |
| Size (mm) | 10x10x0.5mm;dia2″x0.5mm | |
| Polishing | Single or double | |
| Surface Rough Ra | <15A | |
| Note: The corresponding direction and size can be customized according to customer requirements. | ||
| Remarks | Class 1000 super clean room Class 100 super clean bag | |
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