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GaAs

Longsee 2022-11-11 0

GaAs
Technical parameterSingle crystal(GaAs)
Doped
None;Si;Cr;Te;Zn
Conduction Type
Si;N;Si;N;P
Concentration of flows cm-3
/>5x10¹⁷/~2x10¹⁸>5x10¹⁸
Density cm-2
<5x10⁵
Growth Method Max Size
LEC&HBØ3"
Regular sizeCrystal Orientation
<100>
Size (mm)
10x10x0.5mm;dia2″x0.5mm
Polishing
Single or double
Surface Rough Ra
<15A
Note: The corresponding direction and size can be customized according to customer requirements.
RemarksClass 1000 super clean room Class 100 super clean bag

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