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GaAs | ||
Technical parameter | Single crystal | (GaAs) |
Doped | None;Si;Cr;Te;Zn | |
Conduction Type | Si;N;Si;N;P | |
Concentration of flows cm-3 | />5x10¹⁷/~2x10¹⁸>5x10¹⁸ | |
Density cm-2 | <5x10⁵ | |
Growth Method Max Size | LEC&HBØ3" | |
Regular size | Crystal Orientation | <100> |
Size (mm) | 10x10x0.5mm;dia2″x0.5mm | |
Polishing | Single or double | |
Surface Rough Ra | <15A | |
Note: The corresponding direction and size can be customized according to customer requirements. | ||
Remarks | Class 1000 super clean room Class 100 super clean bag |
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